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(R)
STD1802
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PRELIMINARY DATA
Table 1: GENERAL FEATURES
Ordering Code STD1802T4
Marking D1802
Shipment Tape & Reel

VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING DPAK POWER PACKAGE IN TAPE & REEL (Suffix "T4")
3 1
DPAK ( TO-252)
APPLICATIONS: CCFL DRIVERS VOLTAGE REGULATORS RELAY DRIVERS HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.
Table 2: ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T case = 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 60 6 3 6 1 15 -65 to 150 150
Rev. 3
Unit V V V A A A W
o o
C C
July 2004
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STD1802
Table 3: THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 8.33
o
C/W
Table 4: ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 40 V V EB = 4 V I C = 100 A 80 Min. Typ. Max. 0.1 0.1 Unit A A V
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition frequency Collector-Base Capacitance RESISTIVE LOAD Turn- on Time Storage Time Fall Time
I C = 1 mA
60
V
I E = 100 A
6
V
V CE(sat) V BE(sat) h FE fT C CBO
IC = 2 A IC = 3 A IC = 2 A I C = 100 mA IC = 3 A V CE = 10 V V CB = 10 V
I B = 100 mA I B = 150 mA I B = 100 mA V CE = 2 V V CE = 2 V I C = 50 mA f = 1 MHz 200 100
150 200 0.9
300 400 1.2 400
mV mV V
150 50
MHz pF
t ON ts tf
IC = 1 A I B1 = - I B2 = 0.1 A
V CC = 30 V
50 1.35 120
ns s ns
Pulsed: Pulse duration = 300s, duty cycle = 1.5 %
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STD1802
Figure 1: Derating Curve Figure 2: DC Current Gain
Figure 3: Collector-Emitter Saturation Voltage
Figure 4: Collector-Emitter Saturation Voltage
Figure 5: Base-Emitter Saturation Voltage
Figure 6: Base-Emitter On Voltage
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STD1802
Figure 7: Switching Times Resistive Load Figure 8: Switching Times Resistive Load
Figure 9: Switching Times Resistive Load
Figure 10: Switching Times Inductive Load
Figure 11: Switching Times Inductive Load
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STD1802
Figure 12: Resistive Load Switching Test Circuit.
1) Fast electronic switch 2) Non-inductive Resistor
Table 5: Revision History
Date 12 July 2004 Revision 1 Description of Changes Third Revision
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STD1802
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0
o
DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8
o
TYP.
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
0.8 0.024 0
o
0.039 0o
P032P_B
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STD1802
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America. http://www.st.com
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